參數(shù)資料
型號: UPD45128163G5-A10LT-9JF
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
中文描述: 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: PLASTIC, TSOP2-54
文件頁數(shù): 22/86頁
文件大?。?/td> 774K
代理商: UPD45128163G5-A10LT-9JF
Data Sheet E0348N10 (Ver. 1.0)
22
μ
PD45128163-T
8. Address Bits of Bank-Select and Precharge
A11
A10
A9
A8
A7
A6
A4
A5
A3
A2
A1
A0
Row
(Activate command)
A11
A10
A9
A8
A7
A6
A4
A5
A3
A2
A1
A0
(Precharge command)
disables Auto-Precharge
(End of Burst)
enables Auto-Precharge
(End of Burst)
0
1
x
A10
A9
A8
A7
A6
A4
A5
A3
A2
A1
A0
Col.
(/CAS strobes)
x : Don’t care
Select Bank A
“Activate” command
Select Bank B
“Activate” command
Select Bank C
“Activate” command
Select Bank D
“Activate” command
0
0
1
1
0
1
0
1
BA1(A12) BA0(A13)
BA1(A12) BA0(A13)
BA1(A12) BA0(A13)
0
0
1
1
x
Result
enables Read/Write
commands for Bank A
enables Read/Write
commands for Bank B
enables Read/Write
commands for Bank C
enables Read/Write
commands for Bank D
0
0
1
1
0
1
0
1
Result
Result
Precharge Bank A
Precharge Bank B
Precharge Bank C
Precharge Bank D
Precharge All Banks
A10
0
0
0
0
1
0
1
0
1
x
BA1
(A13)
BA1
(A13)
BA1
(A13)
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