參數(shù)資料
型號: UPD45128163G5-A10LT-9JF
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
中文描述: 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: PLASTIC, TSOP2-54
文件頁數(shù): 14/86頁
文件大?。?/td> 774K
代理商: UPD45128163G5-A10LT-9JF
Data Sheet E0348N10 (Ver. 1.0)
14
μ
PD45128163-T
4.4 Operative Command Table
Note1
(1/3)
Current state
/CS /RAS /CAS /WE
Address
Command
Action
Notes
Idle
H
×
×
×
×
DESL
Nop or power down
2
L
H
H
×
×
NOP or BST
Nop or power down
2
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
Row activating
L
L
H
L
BA, A10
PRE/PALL
Nop
L
L
L
H
×
REF/SELF
CBR (auto) refresh or self refresh
4
L
L
L
L
Op-Code
MRS
Mode register accessing
Row active
H
×
×
×
×
DESL
Nop
L
H
H
×
×
NOP or BST
Nop
L
H
L
H
BA, CA, A10
READ/READA
Begin read : Determine AP
5
L
H
L
L
BA, CA, A10
WRIT/WRITA
Begin write : Determine AP
5
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Precharge
6
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Read
H
×
×
×
×
DESL
Continue burst to end
Row active
L
H
H
H
×
NOP
Continue burst to end
Row active
L
H
H
L
×
BST
Burst stop
Row active
L
H
L
H
BA, CA, A10
READ/READA
Terminate burst, new read : Determine AP
7
L
H
L
L
BA, CA, A10
WRIT/WRITA
Terminate burst, start write : Determine AP
7, 8
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Terminate burst, precharging
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Write
H
×
×
×
×
DESL
Continue burst to end
Write recovering
L
H
H
H
×
NOP
Continue burst to end
Write recovering
L
H
H
L
×
BST
Burst stop
Row active
L
H
L
H
BA, CA, A10
READ/READA
Terminate burst, start read : Determine AP
7, 8
L
H
L
L
BA, CA, A10
WRIT/WRITA
Terminate burst, new write : Determine AP
7
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Terminate burst, precharging
9
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
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