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參數(shù)資料
| 型號： | UPD45128163G5-A10LT-9JF |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 15/86頁 |
| 文件大小： | 774K |
| 代理商： | UPD45128163G5-A10LT-9JF |
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Data Sheet E0348N10 (Ver. 1.0)
15
μ
PD45128163-T
(2/3)
Notes
Current state
/CS /RAS /CAS /WE
Address
Command
Action
Read with auto
H
×
×
×
×
DESL
Continue burst to end
→
Precharging
precharge
L
H
H
H
×
NOP
Continue burst to end
→
Precharging
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Write with auto
precharge
H
×
×
×
×
DESL
Continue burst to end
→
Write
recovering with auto precharge
L
H
H
H
×
NOP
Continue burst to end
→
Write
recovering with auto precharge
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Precharging
H
×
×
×
×
DESL
Nop
→
Enter idle after t
RP
L
H
H
H
×
NOP
Nop
→
Enter idle after t
RP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Nop
→
Enter idle after t
RP
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Row activating
H
×
×
×
×
DESL
Nop
→
Enter bank active after t
RCD
L
H
H
H
×
NOP
Nop
→
Enter bank active after t
RCD
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3, 10
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD45128163G5-A80T-9JF | 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
| UPD45128163G5-A75T-9JF | 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
| UPD45128163G5-A10T-9JF | 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
| UPD45128163G5-A80-9JF | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128441G5-A10-9JF | 128M-bit Synchronous DRAM 4-bank, LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD45128163G5-A75-9JF | 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| UPD45128841G5-A75-9JF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP |
| UPD4516161AG5A109NF | 制造商:NEC Electronics Corporation 功能描述: |
| UPD4516161AG5-A10-9NF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
| UPD4528BC | 制造商:Panasonic Industrial Company 功能描述:IC |
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