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| 型號(hào)： | TMS418169P-60 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS |
| 中文描述： | 1048576字由16位擴(kuò)充數(shù)據(jù)輸出高速DRAM等 |
| 文件頁(yè)數(shù)： | 36/67頁(yè) |
| 文件大?。?/td> | 1464K |
| 代理商： | TMS418169P-60 |
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TMS55160, TMS55161, TMS55170, TMS55171
262144 BY 16-BIT MULTIPORT VIDEO RAMS
SMVS464
–
MARCH1996
36
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251
–
1443
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature (see Note 7)
PARAMETER
TEST
ALT.
’
551xx-60
MIN
’
551xx-70
MIN
UNIT
CONDITIONS
SYMBOL
MAX
MAX
ta(C)
ta(CA)
ta(CP)
ta(G)
ta(R)
ta(SE)
ta(SQ)
Access time, DQx from CASx low
td(RLCL) = MAX
td(RLCL) = MAX
td(RLCL) = MAX
tCAC
tAA
tCPA
tOEA
tRAC
tSEA
tSCA
17
20
ns
Access time, DQx from column address
30
35
ns
Access time, DQx from CASx high
35
40
ns
Access time, DQx from TRG low
15
20
ns
Access time, DQx from RAS low
td(RLCL) = MAX
CL = 30 pF
CL = 30 pF
60
70
ns
Access time, SQx from SE low
12
15
ns
Access time, SQx from SC high
15
20
ns
tdis(CH)
Disable time, random output from CASx high
(see Note 8)
CL = 50 pF
tOFF
3
15
3
20
ns
tdis(G)
Disable time, random output from TRG high
(see Note 8)
CL = 50 pF
tOEZ
3
15
3
20
ns
tdis(RH)
Disable time, random output from RAS high
(see Note 8)
CL = 50 pF
3
15
3
20
ns
tdis(SE)
Disable time, serial output from SE high (see Note 8)
CL = 30 pF
tSEZ
3
10
3
20
ns
tdis(WL)
Disable time, random output from WE low
(see Note 8)
For conditions shown as MIN/MAX, use the appropriate value specified in the timing requirements.
NOTES:
7. Switching times for RAM-port output are measured with a load equivalent to 1 TTL load and 50 pF. Data out reference level:
VOH / VOL = 2 V/0.8 V. Switching times for SAM-port output are measured with a load equivalent to 1 TTL load and 30 pF. Serial-data
out reference level: VOH / VOL = 2 V/0.8 V.
8. tdis(CH), tdis(RH), tdis(G), tdis(WL), and tdis(SE) are specified when the output is no longer driven.
CL = 30 pF
tWEZ
0
15
0
20
ns
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