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參數(shù)資料
| 型號： | TLV4112CDGN |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 電壓反饋運(yùn)算放大器 |
| 文件頁數(shù)： | 13/22頁 |
| 文件大小： | 388K |
| 代理商： | TLV4112CDGN |
TLV4110, TLV4111, TLV4112, TLV4113
FAMILY OF HIGH OUTPUT DRIVE OPERATIONAL
AMPLIFIERS WITH SHUTDOWN
SLOS289B – DECEMBER 1999 – REVISED DECEMBER 2000
13
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
_
+
Rnull
RL
CL
Figure 29
general power design considerations
When driving heavy loads at high junction temperatures there is an increased probability of electromigration
affecting the long term reliability of ICs. Therefore for this not to be an issue either
the output current must be limited (at these high junction temperatures) or
the junction temperature must be limited.
The maximum continuous output current at a die temperature 150
°
C will be 1/3 of the current at 105
°
C.
The junction temperature will be dependent on the ambient temperature around the IC, thermal impedance from
the die to the ambient and power dissipated within the IC.
T
J
= T
A
+
θ
JA
×
P
DIS
Where
P
DIS
is the IC power dissipation and is equal to the output current multiplied by the voltage dropped across the
output of the IC.
θ
JA
is the thermal impedance between the junction and the ambient temperature of the IC.
T
J
is the junction temperature.
T
A
is the ambient temperature.
Reducing one or more of these factors will result in a reduced die temperature. The 8-pin SOIC (small outline
integrated circuit) has a thermal impedance from junction to ambient of 176
°
C/W. For this reason we
recommend that the maximum power dissipation of the 8-pin SOIC package be limited to 350 mW, with peak
dissipation of 700 mW as long as the RMS value is less than 350 mW.
The use of the MSOP PowerPAD
dramatically reduces the thermal impedance from junction to case. And with
correct mounting, the reduced thermal impedance will greatly increase the IC’s permissible power dissipation
and output current handling capability. For example, the power dissipation of the PowerPAD
is increased to
above 1 W. Sinusoidal and pulse-width modulated output signals will also increase the output current capability.
The equivalent dc current is proportional to the square-root of the duty cycle:
IDC(EQ)
ICont
(duty cycle)
CURRENT DUTY CYCLE
AT PEAK RATED CURRENT
EQUIVALENT DC CURRENT
AS A PERCENTAGE OF PEAK
100
100
70
84
50
71
Note that with an operational amplifier, a duty cycle of 70% would often result in the op amp sourcing current
70% of the time and sinking current 30%, therefore, the equivalent dc current would still be 0.84 times the
continuous current rating at a particular junction temperature.
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| TLV4112IDGNR | Transient Voltage Suppressor Diodes |
| TLV4112IDR | Voltage-Feedback Operational Amplifier |
| TLV4110CDR | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TLV4112CDGNG4 | 功能描述:運(yùn)算放大器 - 運(yùn)放 High-Output-Drive Op Amp RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| TLV4112CDGNR | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| TLV4112CDR | 制造商:Rochester Electronics LLC 功能描述:HIGH DRIVE,RRO,DUAL OP AMP - Bulk |
| TLV4112CP | 功能描述:運(yùn)算放大器 - 運(yùn)放 High-Output-Drive Op Amp RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| TLV4112CPE4 | 功能描述:運(yùn)算放大器 - 運(yùn)放 High-Output-Drive Op Amp RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
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