參數(shù)資料
型號(hào): TE28F160B3TA110
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory
中文描述: 1M X 16 FLASH 2.7V PROM, 110 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 4/49頁
文件大?。?/td> 427K
代理商: TE28F160B3TA110
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
4
PRELIMINARY
REVISION HISTORY
Number
Description
-001
Original version
-002
Section 3.4, V
PP
Program and Erase Voltages added
Updated Figure 9: Automated Block Erase Flowchart
Updated Figure 10: Erase Suspend/Resume Flowchart (added program op. to table)
Updated Figure 16: AC Waveform: Program and Erase Operations (updated notes)
I
PPR
maximum specification change from ±25
μ
A to ±50
μ
A
Program and Erase Suspend Latency specification change
Updated Appendix A: Ordering Information (included 8M and 4M information)
Updated Figure, Appendix D: Architecture Block Diagram (Block info. in Words not
bytes)
Minor wording changes
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TE28F160B3TD70A 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤