參數(shù)資料
型號： TE28F160B3TA110
廠商： INTEL CORP
元件分類： DRAM
英文描述： 3 Volt Advanced Boot Block Flash Memory
中文描述： 1M X 16 FLASH 2.7V PROM, 110 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 36/49頁
文件大小： 427K
代理商： TE28F160B3TA110
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
36
PRELIMINARY
Table 13. DC Characteristics: V
CCQ
= 1.8V
–2.2V
(Continued)
Sym
Parameter
Notes
V
CC1
:
2.7V–2.85V
V
CC2
:
2.7V–3.3V
Unit
Test Conditions
Typ
Max
I
CCW
V
CC
Program Current
1,4,7
8
20
mA
V
PP
= V
PPH1
or V
PPH2
Program in Progress
8
20
mA
V
PP
= V
PPH3
(12V)
Program in Progress
I
CCE
V
CC
Erase Current
1,4,7
8
20
mA
V
PP
= V
PPH1
or V
PPH2
Erase in Progress
8
20
mA
V
= V
(12V)
Erase in Progress
I
CCES
V
CC
Erase Suspend
Current
1,2,4,7
20
50
μA
CE# = V
IH
Erase Suspend in Progress
I
CCWS
V
Program Suspend
Current
1,2,4,7
20
50
μA
CE# = V
Program Suspend in Progress
I
PPD
V
PP
Deep Power-Down
Current
1
0.2
5
μA
RP# = GND ± 0.2V
I
PPR
V
PP
Read and Standby
Current
V
PP
Program Current
1
2
±50
μA
V
PP
≤
V
CC
I
PPW
1,4
15
40
mA
V
PP
= V
PPH1
or V
PPH2
Program in Progress
10
25
mA
V
PP
= V
PPH3
(12V)
Program in Progress
I
PPE
V
PP
Erase Current
1,4
13
25
mA
V
PP
= V
PPH1
or V
PPH2
Erase in Progress
8
25
mA
V
PP
= V
PPH3
(12V)
Erase in Progress
I
PPES
V
PP
Erase Suspend
Current
1
50
200
μA
V
PP
= V
PPH1
, V
PPH2
, or V
PPH3
Erase Suspend in Progress
I
PPWS
V
Program Suspend
Current
1
50
200
μA
V
PP
= V
PPH1
, V
PPH2
, or V
PPH3
Program Suspend in Progress
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