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參數(shù)資料
| 型號： | TE28F160B3TA110 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 110 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 28/49頁 |
| 文件大?。?/td> | 427K |
| 代理商： | TE28F160B3TA110 |
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SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
28
PRELIMINARY
After any program or block erase operation is
complete (even after V
PP
transitions down to
V
PPLK
), the CUI must be reset to read array mode
via the Read Array command if access to the flash
memory array is desired.
Refer to AP-617 Additional Flash Data Protection
Using V
PP
, RP#, and WP#for a circuit-level
description of how to implement the protection
schemes discussed in Section 3.5.
3.7
Power Supply Decoupling
Flash memory’s power switching characteristics
require
careful
device
designers should consider three supply current
issues:
1.
Standby current levels (I
CCS
)
2.
Active current levels (I
CCR
)
3.
Transient peaks produced by falling and rising
edges of CE#.
decoupling.
System
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 μF ceramic
capacitor connected between each V
CC
and GND,
and between its V
PP
and GND. These high-
frequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
3.7.1
V
TRACE ON PRINTED CIRCUIT
BOARDS
Designing for in-system writes to the flash memory
requires special consideration of the V
PP
power
supply trace by the printed circuit board designer.
The V
PP
pin supplies the flash memory cells current
for programming and erasing. V
PP
trace widths and
layout should be similar to that of V
CC
. Adequate
V
PP
supply traces, and decoupling capacitors
placed adjacent to the component, will decrease
spikes and overshoots.
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| TE28F800B3T150 | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F400CEB120 | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F400BV-T80 | RP40 (G) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 40 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Design Meet Safety Standard; Standard 50.8 x50.8x10.2mm Package; Efficiency to 90% |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F160B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F160B3TA-90 | 制造商:Intel 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP |
| TE28F160B3TC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F160B3TC80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F160B3TD70A | 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
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