參數(shù)資料
型號(hào)： T4312816B-6SG
廠商： TM Technology, Inc.
英文描述： 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
中文描述： 8米× 16 SDRAM的2米x 16Bit的X 4Banks同步DRAM
文件頁(yè)數(shù)： 9/70頁(yè)
文件大?。?/td> 688K
代理商： T4312816B-6SG
TE
CH
tm
T4312816B
TM Technology Inc. reserves the right
P. 9
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge
function should be issued
m
cycles after the clock edge in which the last data-in element is registered, where
m
equals t
WR
/t
CK
rounded up to the next whole number. In addition, the DQM signals must be used to mask input
data, starting with the clock edge following the last data-in element and ending with the clock edge on which
the BankPrecharge/PrechargeAll command is entered (refer to the following figure).
CLK
T0
T 1
T2
T3
T4
T5
T6
WRITE
COMMAND
BANK (S)
ROW
NOP
NOP
Precharge
NOP
NOP
Activate
BANK
COL n
DIN
n
DIN
n + 1
DQM
ADDRESS
DQ
tWR
tRP
: don't care
Note:
The DQMs can remain low in this example if the length of the write burst is 1 or 2.
Write to Precharge
7
Write and AutoPrecharge command (RAS# = "H", CAS# = "L", WE# = "L", BAs = Bank, A10 = "H", A0-A8
= Column Address)
The Write and AutoPrecharge command performs the precharge operation automatically after the write
operation. Once this command is given, any subsequent command can not occur within a time delay of
{
(burst
length -1) + t
WR
+ t
RP
(min.)
}
. At full-page burst, only the write operation is performed in this command and the
auto precharge function is ignored.
CLK
COMMAND
T0
T 1
T2
T3
T4
T5
T6
T7
T8
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CAS# latency=2
tCK2, DQ's
CAS# latency=3
tCK3, DQ's
DIN A0
DIN A1
DIN A0
DIN A1
*
*
*
t
DAL
=
t
WR
+
t
RP
Begin AutoPrecharge
Bank can be reactivated at completion of
t
DAL
Bank A
Activate
AutoPrecharge
t
DAL
t
DAL
Burst Write with Auto-Precharge
(Burst Length = 2, CAS# Latency = 2, 3)
8
Mode Register Set command
The mode register stores the data for controlling the various operating modes of SDRAM. The Mode
Register Set command programs the values of CAS# latency, Addressing Mode and Burst Length in the Mode
register to make SDRAM useful for a variety of different applications. The default values of the Mode Register
after power-up are undefined; therefore this command must be issued at the power-up sequence. The state of
pins A0~A9 and A11 in the same cycle is the data written to the mode register. One clock cycle is required to
complete the write in the mode register (refer to the following figure). The contents of the mode register can be
changed using the same command and the clock cycle requirements during operation as long as all banks are in
the idle state.
(RAS# = "L", CAS# = "L", WE# = "L", A0-A11 = Register Data)
相關(guān)PDF資料
PDF描述
T4312816B-7S 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
T4312816B-7SG 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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T4312816B-7SG 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
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T431616A 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM
T431616A-7C 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM
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