參數(shù)資料
型號: T4312816B-6SG
廠商: TM Technology, Inc.
英文描述: 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
中文描述: 8米× 16 SDRAM的2米x 16Bit的X 4Banks同步DRAM
文件頁數(shù): 62/70頁
文件大小: 688K
代理商: T4312816B-6SG
TE
CH
tm
T4312816B
TM Technology Inc. reserves the right
P. 62
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 19.3. Full Page Write Cycle
(Burst Length=Full Page, CAS# Latency=3)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9,A11
DQM
DQ
BA0,1
DAx+1
DAx
Activate
Command
Bank A
Hi-Z
Activate
Command
Bank B
The burst counter wraps
from the highest order
page address back to zero
during this time interval
RAx
RAx
Burst Stop
Command
CBx
High
RBx
CAx
Write
Command
Bank B
Precharge
Command
Bank B
RBy
RBy
Full Page burst operation does
not terminate when the burst
length is satisfied; the burst counter
increments and continues bursting
beginning with the starting address.
Activate
Command
Bank B
t
CK3
RBx
DAx+2 DAx+3 DAx-1
DAx
DAx+1
DBx
DBx+1DBx+2DBx+3
DBx+4 DBx+5
Write
Command
Bank A
Data is ignored
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