參數(shù)資料
型號: T4312816B-6SG
廠商: TM Technology, Inc.
英文描述: 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
中文描述: 8米× 16 SDRAM的2米x 16Bit的X 4Banks同步DRAM
文件頁數(shù): 21/70頁
文件大?。?/td> 688K
代理商: T4312816B-6SG
TE
CH
tm
Figure 4. Power on Sequence and Auto Refresh (CBR)
T4312816B
TM Technology Inc. reserves the right
P. 21
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
A0-A9,A11
DQM
DQ
t
CK2
High level
is reauired
Minimum of 2 Refresh Cycles are required
Hi-Z
t
RP
t
RC
Address Key
Inputs must be
stable for 200
μ
s
PCommand
1stCommand
2ndCommand
Mode Register
CoAny
相關(guān)PDF資料
PDF描述
T4312816B-7S 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
T4312816B-7SG 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
T431616A 1M x 16 SDRAM
T431616A-7C 1M x 16 SDRAM
T431616A-7CI 1M x 16 SDRAM
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