- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382559 > STGB10N60L (意法半導(dǎo)體) N-Channel 10A-600V- D2PAK Logic Level IGBT(N溝道邏輯電平絕緣柵雙極晶體管) PDF資料下載
參數(shù)資料
| 型號： | STGB10N60L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 10A-600V- D2PAK Logic Level IGBT(N溝道邏輯電平絕緣柵雙極晶體管) |
| 中文描述： | N溝道10A條- 600V的D2PAK封裝邏輯電平IGBT的（不適用溝道邏輯電平絕緣柵雙極晶體管） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | STGB10N60L |
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility forthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademarkof STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China -France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A.
http://www.st.com
.
STGB10N60L
8/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGB10NB40LZ | N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT |
| STGB10NB40LZT4 | N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT |
| STGB20NB32LZ-1 | N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH⑩ IGBT |
| STGB3NB60K | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD3NB60KT4 | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGB10NB37LZ | 功能描述:IGBT 晶體管 10 A 410V INTERNALLY CLAMPED IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB10NB37LZ_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT |
| STGB10NB37LZT4 | 功能描述:IGBT 晶體管 10 A - 410 V Int Clamped IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB10NB40LZ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT |
| STGB10NB40LZT4 | 功能描述:IGBT 晶體管 N-Ch Clamped 20 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。