參數(shù)資料
型號(hào)： STGB20NB32LZ-1
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH⑩ IGBT
中文描述： N通道鉗位20A條- D2PAK/I2PAK內(nèi)部鉗位PowerMESH⑩IGBT的
文件頁數(shù)： 1/11頁
文件大?。?/td> 462K
代理商： STGB20NB32LZ-1
1/11
December 2002
STGB20NB32LZ
STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D
2
PAK/I
2
PAK
INTERNALLY CLAMPED PowerMESH IGBT
I
POLYSILICON GATE VOLTAGE DRIVEN
I
LOW THRESHOLD VOLTAGE
I
LOW ON-VOLTAGE DROP
I
HIGH CURRENT CAPABILITY
I
HIGH VOLTAGE CLAMPING FEATURE
I
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
I
AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Reverse Battery Protection
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuous) at T
c
= 25°C
I
C
Collector Current (continuous) at T
c
= 100°C
I
CM
( )
Collector Current (pulsed)
()Pulse width limited by safe operating area
TYPE
V
CES
V
CE(sat)
I
C
STGB20NB32LZ
STGB20NB32LZ-1
CLAMPED
CLAMPED
< 2.0
V
< 2.0
V
20 A
20 A
Parameter
Value
Unit
CLAMPED
V
20
V
CLAMPED
V
40
A
30
A
80
A
Eas
Single Pulse Energy T
c
= 25°C
700
mJ
P
tot
Total Dissipation at T
c
= 25°C
Derating Factor
150
W
1
W/°C
E
SD
T
stg
T
j
ESD (Human Body Model)
4
KV
Storage Temperature
–65 to 175
°C
Max. Operating Junction Temperature
175
°C
1
3
D
2
PAK
123
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGB20NB32LZT4 功能描述:IGBT 晶體管 N-Ch Clamped 20 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB20NB37LZ 功能描述:IGBT 晶體管 N-Channel 20 Amp IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB20NB37LZ_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT
STGB20NB37LZT4 功能描述:IGBT 晶體管 N-Ch Clamped 20 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB20NB41LZ 制造商:STMicroelectronics 功能描述:
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