參數(shù)資料
型號： ST7FDALIF2M6
廠商： 意法半導(dǎo)體
元件分類： ADC
英文描述： 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI
中文描述： 8位單電壓閃存存儲器，數(shù)據(jù)EEPROM，模數(shù)轉(zhuǎn)換器，定時(shí)器，SPI和大理微控制器
文件頁數(shù)： 111/141頁
文件大?。?/td> 2175K
代理商： ST7FDALIF2M6
ST7DALI
111/141
13.6 MEMORY CHARACTERISTICS
T
A
= -40°C to 85°C, unless otherwise specified
13.6.1 RAM and Hardware Registers
13.6.2 FLASH Program Memory
13.6.3 EEPROM Data Memory
Notes:
1. Minimum V
supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3.
The data retention time increases when the T
A
decreases.
4. Data based on reliability test results and monitored in production.
5. Data based on characterization results, not tested in production.
6. Guaranteed by Design. Not tested in production.
7. Design target value pending full product characterization.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
RM
Data retention mode
1)
HALT mode (or RESET)
1.6
V
Symbol
V
DD
Parameter
Conditions
Min
2.4
Typ
Max
5.5
10
0.48
Unit
V
ms
s
years
cycles
Operating voltage for Flash write/erase
Programming time for 1~32 bytes
2)
Programming time for 1.5 kBytes
Data retention
4)
Write erase cycles
t
prog
T
A
=
40 to +85°C
T
A
=
+25°C
T
A
=
+55°C
3)
T
A
=
+25°C
Read / Write / Erase
modes
f
CPU
= 8MHz, V
DD
= 5.5V
No Read/No Write Mode
Power down mode / HALT
5
0.24
t
RET
N
RW
20
10K
7)
I
DD
Supply current
2.6
6)
mA
100
0.1
μ
A
μ
A
0
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
DD
Operating voltage for EEPROM
write/erase
Programming time for 1~32 bytes
Data retention
4)
Write erase cycles
2.4
5.5
V
t
prog
t
ret
N
RW
T
A
=
40 to +85°C
T
A
=+55°C
3)
T
A
=
+25°C
5
10
ms
years
cycles
20
300K
7)
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