參數(shù)資料
型號(hào)： ST52513F3
廠商： STMICROELECTRONICS
元件分類： 微控制器/微處理器
英文描述： MICROCONTROLLER, PDSO20
封裝： ROHS COMPLIANT, SOP-20
文件頁數(shù)： 25/136頁
文件大小： 2791K
代理商： ST52513F3
16.12 EMC Characteristics
Susceptibility tests are performed on a sample
basis during product characterization.
16.12.1 Functional EMS . (Electro
Magnetic
Susceptibility)
Based on a simple running application on the
product (toggling two LEDs through I/O ports), the
product is stressed by two electromagnetic events
until a failure occurs (indicated by the LEDs).
■ ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
■ FTB: A burst of Fast Transient Voltage (positive
and negative) is applied to VDD and VSS through
a 100 pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
A device reset allows normal operation to be
resumed.
Notes:
1. Data based on characterization results, not tested in production.
2. It is suggested to insert decoupling capacitors (10 nF and 100 nF electrolytic) on the power supply lines
to obtain a good price vs. EMC performance tradeoff. They have to be put as close as possible to the
device power supply pins.
16.12.2 Absolute Electrical Sensitivity. Based
on three different tests (ESD, LU and DLU) using
specific measurement methods, the product is
stressed in order to determine its performance in
terms of electrical sensitivity.
16.12.3 Electro-Static Discharge (ESD).
Electro-Static Discharges (3 positive then 3 nega-
tive pulses separated by 1 second) are applied to
the pins of each sample according to each pin
combination. The sample size depends of the
number of supply pins of the device (3 parts*(n+1)
supply pin). The model simulated is the Human
Body Model. This test conforms to the JESD22-
A114A/A115A standard. See Figure 16.9.
Figure 16.9 Typical Equivalent ESD Circuits
Symbol
Parameter
Conditions
Level/Class
VFESD
Voltage limits to be applied on any I/O
pin to induce a functional disturbance
VDD=5 V, TA=25° C, fosc= 8 MHz SDIP32
conform with IEC 1000-4-2
2B
VFFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD=5 V, TA=25° C, fosc= 8 MHz SDIP32
conform with IEC 1000-4-4
3B
Symbol
Parameter
Conditions
Maximum value 1)
Unit
VESD(HBM)
Electro-static discharge voltage
(Human Body Model)
TA=25° C
2kV
ST FIVE
S2
HIGH VOLTAGE
PULSE
GENERATOR
S1
R = 1500
Ω
C
L = 100 pF
HUMAN BODY MODEL
HIGH VOLTAGE
PULSE
GENERATOR
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