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參數(shù)資料
| 型號(hào)： | skb04n60 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 快速的S - IGBT的不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管（不擴(kuò)散技術(shù)中的快速第S - IGBT技術(shù)） |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 274K |
| 代理商： | SKB04N60 |
SKP04N60
SKB04N60
9
Mar-00
t
r
,
R
40A/
μ
s
120A/
μ
s
200A/
μ
s
280A/
μ
s
360A/
μ
s
0ns
100ns
200ns
300ns
400ns
500ns
I
F
= 2A
I
F
= 4A
I
F
= 8A
Q
r
,
R
40A/
μ
s
120A/
μ
s
200A/
μ
s
280A/
μ
s
360A/
μ
s
0nC
80nC
160nC
240nC
320nC
400nC
480nC
560nC
I
F
= 8A
I
F
= 4A
I
F
= 2A
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C)
I
r
,
R
40A/
μ
s
120A/
μ
s
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C)
200A/
μ
s
280A/
μ
s
360A/
μ
s
0A
2A
4A
6A
8A
I
F
= 2A
I
F
= 8A
I
F
= 4A
d
r
/
,
D
O
40A/
μ
s
120A/
μ
s
200A/
μ
s
280A/
μ
s
360A/
μ
s
0A/
μ
s
80A/
μ
s
160A/
μ
s
240A/
μ
s
320A/
μ
s
400A/
μ
s
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(
V
R
= 200V,
T
j
= 125
°
C)
相關(guān)PDF資料 |
PDF描述 |
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| SKP04N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| skb10n60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| SKP10N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| SKW10N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| skb15n60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKB04N60_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SKB04N60ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 9.4A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 9.4A 50W TO263-3 |
| SKB04N60E3045A | 制造商:Infineon Technologies AG 功能描述:SP000012425_IGBT |
| SKB06N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 6A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKB06N60ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 6A 68W TO263-3-2 |
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