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參數(shù)資料
| 型號(hào)： | skb04n60 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 快速的S - IGBT的不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管（不擴(kuò)散技術(shù)中的快速第S - IGBT技術(shù)） |
| 文件頁(yè)數(shù)： | 3/13頁(yè) |
| 文件大?。?/td> | 274K |
| 代理商： | SKB04N60 |
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SKP04N60
SKB04N60
3
Mar-00
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
22
15
237
70
0.070
0.061
0.131
26
18
284
84
0.081
0.079
0.160
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=4A,
V
GE
=0/15V,
R
G
=67
,
Energy losses include
“tail” and diode
reverse recovery.
mJ
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
-
-
180
15
165
130
2.5
180
-
-
-
-
-
-
ns
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
nC
A
A/
μ
s
T
j
=25
°
C,
V
R
=200V,
I
F
=4A,
di
F
/dt
=200A/
μ
s
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
22
16
264
104
0.115
0.111
0.226
26
19
317
125
0.132
0.144
0.277
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=4A,
V
GE
=0/15V,
R
G
=67
Energy losses include
“tail” and diode
reverse recovery.
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
-
-
230
23
227
300
4
200
-
-
-
-
-
-
ns
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
nC
A
A/
μ
s
T
j
=150
°
C
V
R
=200V,
I
F
=4A,
di
F
/dt
=200A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKB04N60_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
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| SKB06N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 6A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKB06N60ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 6A 68W TO263-3-2 |
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