參數(shù)資料
型號: skb04n60
廠商: SIEMENS AG
英文描述: Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT)
中文描述: 快速的S - IGBT的不擴(kuò)散核武器條約與軟,恢復(fù)快反平行快恢復(fù)二極管(不擴(kuò)散技術(shù)中的快速第S - IGBT技術(shù))
文件頁數(shù): 6/13頁
文件大?。?/td> 274K
代理商: SKB04N60
SKP04N60
SKB04N60
6
Mar-00
t
,
S
0A
2A
4A
6A
8A
10A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
0
50
100
150
200
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 67
)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 4A)
t
,
S
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 4A,
R
G
= 67
)
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.2mA)
相關(guān)PDF資料
PDF描述
SKP04N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT)
skb10n60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT)
SKP10N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT)
SKW10N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT)
skb15n60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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