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參數(shù)資料
| 型號(hào)： | skb04n60 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 快速的S - IGBT的不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管（不擴(kuò)散技術(shù)中的快速第S - IGBT技術(shù)） |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大?。?/td> | 274K |
| 代理商： | SKB04N60 |
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SKP04N60
SKB04N60
7
Mar-00
E
,
S
0A
2A
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 67
)
4A
6A
8A
10A
0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
0.6mJ
E
on
E
off
E
ts
*
E
,
S
0
50
R
G
,
GATE RESISTOR
100
150
200
0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
E
ts
*
E
on
*
E
off
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 4A)
E
,
S
0°C
50°C
100°C
150°C
0.0mJ
0.1mJ
0.2mJ
0.3mJ
E
ts
*
E
on
*
E
off
Z
t
,
T
1μs
10μs
100μs
t
p
,
PULSE WIDTH
1ms
10ms 100ms
1s
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 4A,
R
G
= 67
)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
*)
E
and
E
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
*)
E
on
and
E
ts
include losses
due to diode recovery.
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.815
0.698
0.941
0.046
τ
,
(s)
=
0.0407
5.24*10
-3
4.97*10
-4
4.31*10
-5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKB04N60_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SKB04N60ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 9.4A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 9.4A 50W TO263-3 |
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| SKB06N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 6A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKB06N60ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 6A 68W TO263-3-2 |
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