- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄368617 > Si571 (Silicon Laboratories Inc.) ANY-RATE I2C PROGRAMMABLE XO/VCXO PDF資料下載
參數(shù)資料
| 型號(hào)： | Si571 |
| 廠商： | Silicon Laboratories Inc. |
| 英文描述： | ANY-RATE I2C PROGRAMMABLE XO/VCXO |
| 中文描述： | 任意頻率I2C可編程振蕩器/壓控 |
| 文件頁(yè)數(shù)： | 25/26頁(yè) |
| 文件大?。?/td> | 295K |
| 代理商： | SI571 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)當(dāng)前第25頁(yè)第26頁(yè)
Si570/Si571
Rev. 0.3
25
D
OCUMENT
C
HANGE
L
IST
Revision 0.1 to Revision 0.2
Updated " Description" on page 1.
Updated "1. Detailed Block Diagrams" on page 4 for
both XO and VCXO.
Updated the Nominal Control Voltage in Table 2, “V
C
Control Voltage Input,” on page 5.
Updated tables to reflect slight performance
differences between Si570 and Si571.
Added detail to the "3.2. Frequency Programming
Details" on page 12.
Revised "3.2.3. Programming Procedure" on page
12.
z
Procedure now requires use of two frequency
configuration register sets.
z
Procedure now recommends disabling output at
powerup to protect equipment not expecting the
default output frequency.
Added second frequency configuration register set
to the register tables.
Added frequency configuration select register.
Updated "7. Ordering Information" on page 21 to be
consistent with the Si55x series devices.
Revision 0.2 to Revision 0.3
Updated Table 1, “Recommended Operating
Conditions,” on page 5.
z
Device maintains stable operation over –40 to +85 oC
operating temperature range.
z
Supply current specifications updated.
Updated Table 4, “CLK± Output Levels and
Symmetry,” on page 7.
z
Updated LVDS differential peak-peak swing
specifications.
Updated Table 5, “CLK± Output Phase Jitter
(Si570),” on page 7.
Updated Table 6, “CLK± Output Phase Jitter
(Si571),” on page 8.
Updated Table 7, “CLK± Output Period Jitter,” on
page 9.
z
Revised period jitter specifications.
Updated Table 10, “Absolute Maximum Ratings,” on
page 10 to reflect the soldering temperature time at
260 oC is 20–40 sec per JEDEC J-STD-020C.
Updated device programming procedure in Section
"3.2.3. Programming Procedure" on page 12.
Updated "7. Ordering Information" on page 21.
z
Changed ordering instructions to revision D.
Added "8. Si57x Mark Specification" on page 22.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI5853DC | Single P-Ch MOSFET; with integrated Schottky; |
| SI5853DC-T1 | P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
| SI5855DC | Single P-Ch MOSFET; with integrated low-VF Schottky; |
| SI5855DC-T1 | P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
| SI5905DC | Dual P-Channel 1.8-V (G-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI571AJC000337DG | 制造商:Silicon Laboratories Inc 功能描述:SLLSI571AJC000337DG OSC VCXO 155.52MHZ L |
| SI57X-EVB | 功能描述:時(shí)鐘和定時(shí)器開(kāi)發(fā)工具 Si570/Si571 Eval Board RoHS:否 制造商:Texas Instruments 產(chǎn)品:Evaluation Modules 類(lèi)型:Clock Conditioners 工具用于評(píng)估:LMK04100B 頻率:122.8 MHz 工作電源電壓:3.3 V |
| SI5853CDC-T1-E3 | 功能描述:MOSFET 20V 4.0A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5853DC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
| SI5853DC-T1 | 功能描述:MOSFET 20V 3.6A 2.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。