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參數(shù)資料
| 型號： | SGS6N60UFTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 562K |
| 代理商： | SGS6N60UFTU |
2001 Fairchild Semiconductor Corporation
SGS6N60UF Rev. A
S
G
S6N60UF
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
10
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
T
h
erm
a
lResp
on
se,
Zt
h
jc
[
℃
/W
]
Rectangular Pulse Duration [sec]
1
10
100
1000
0.1
1
10
50
Safe Operating Area
V
GE=20V, TC=100
o
C
o
lle
c
to
rC
u
rre
n
t,
I
C
[A
]
Collector-Emitter Voltage, V
CE [V]
0.3
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse T
C = 25
℃
Curves must be derated
linerarly with increase
in temperature
50us
100us
1
DC Operation
Ic MAX. (Continuous)
Ic MAX. (Pulsed)
C
o
llec
to
rC
u
rr
en
t,
I C
[A
]
Collector-Emitter Voltage, V
CE [V]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
× Zthjc + T
C
Fig 17. Transient Thermal Impedance of IGBT
036
9
12
15
0
3
6
9
12
15
300 V
200 V
V
CC = 100 V
Common Emitter
R
L = 100
Tc = 25℃
G
a
te
-
E
m
itte
rV
o
lta
g
e
,
V
GE
[
V
]
Gate Charge, Q
g [ nC ]
123456
5
10
100
200
Eoff
Eon
Eoff
Common Emitter
V
CC = 300V, VGE =
± 15V
R
G = 80
T
C =
25℃
T
C = 125
℃
Sw
it
ch
in
g
Los
s
[
u
J]
Collector Current, I
C [A]
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