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參數(shù)資料
| 型號： | SGS6N60UFTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 562K |
| 代理商： | SGS6N60UFTU |
2001 Fairchild Semiconductor Corporation
SGS6N60UF Rev. A
S
G
S6N60UF
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C = 125
℃
6A
3A
I
C = 1.5A
C
o
llec
tor
-
E
m
itte
r
V
o
lta
g
e
,V
CE
[V
]
Gate - Emitter Voltage, V
GE [V]
04
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C = 25
℃
6A
3A
I
C
= 1.5A
Col
lec
to
r-
Em
it
te
r
V
o
lt
ag
e,
V CE
[V
]
Gate - Emitter Voltage, V
GE [V]
0
1
2
3
4
5
0.1
1
10
100
1000
Duty cycle : 50%
T
C = 100
℃
Power Dissipation = 5W
V
CC = 300V
Load Current : peak of square wave
Frequency [KHz]
L
o
a
d
C
u
rre
n
t
[A
]
030
60
90
120
150
0
1
2
3
4
6A
3A
I
C = 1.5A
Common Emitter
V
GE = 15V
Col
le
ct
or
-Em
it
te
rVol
tage,
V
CE
[V
]
Case Temperature, T
C [
℃]
0.5
1
10
0
3
6
9
12
15
Common Emitter
V
GE = 15V
T
C =
25℃
T
C = 125
℃
C
o
lle
cto
rC
u
rre
n
t,
I C
[A
]
Collector - Emitter Voltage, V
CE
[V]
02
46
8
0
5
10
15
20
25
30
20V
12V
15V
V
GE = 10V
Common Emitter
T
C = 25
℃
Co
llect
o
rCu
rr
e
n
t,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Chacracteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. VGE
Fig 6. Saturation Voltage vs. VGE
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