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參數(shù)資料
| 型號： | SGS6N60UFTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 562K |
| 代理商： | SGS6N60UFTU |
2001 Fairchild Semiconductor Corporation
April 2001
SGS6N60UF Rev. A
IGBT
S
G
S6N60UF
SGS6N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
High speed switching
Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3A
High input impedance
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
SGS6N60UF
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
@ TC = 25°C6
A
Collector Current
@ TC = 100°C3
A
ICM (1)
Pulsed Collector Current
25
A
PD
Maximum Power Dissipation
@ TC = 25°C22
W
Maximum Power Dissipation
@ TC = 100°C9
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
300
°C
Symbol
Parameter
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
--
5.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
G
C
E
G
C
E
TO-220F
G C E
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