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參數(shù)資料
| 型號： | SGS6N60UFTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 562K |
| 代理商： | SGS6N60UFTU |
2001 Fairchild Semiconductor Corporation
SGS6N60UF Rev. A
S
G
S6N60UF
Electrical Characteristics of IGBT T
C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
600
--
V
B
VCES/
T
J
Temperature Coeff. of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/
°C
ICES
Collector Cut-off Current
VCE = VCES, VGE = 0V
--
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
± 100
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 3mA, VCE = VGE
3.5
4.5
6.5
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 3A,
VGE = 15V
--
2.1
2.6
V
IC = 6A,
VGE = 15V
--
2.6
--
V
Dynamic Characteristics
Cies
Input Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
--
220
--
pF
Coes
Output Capacitance
--
22
--
pF
Cres
Reverse Transfer Capacitance
--
7
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 3A,
RG = 80, VGE = 15V,
Inductive Load, TC = 25°C
--
15
--
ns
tr
Rise Time
--
25
--
ns
td(off)
Turn-Off Delay Time
--
60
130
ns
tf
Fall Time
--
70
150
ns
Eon
Turn-On Switching Loss
--
57
--
J
Eoff
Turn-Off Switching Loss
--
25
--
J
Ets
Total Switching Loss
--
82
120
J
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 3A,
RG = 80, VGE = 15V,
Inductive Load, TC = 125°C
--
22
--
ns
tr
Rise Time
--
32
--
ns
td(off)
Turn-Off Delay Time
--
80
200
ns
tf
Fall Time
--
122
300
ns
Eon
Turn-On Switching Loss
--
65
--
J
Eoff
Turn-Off Switching Loss
--
46
--
J
Ets
Total Switching Loss
--
111
170
J
Qg
Total Gate Charge
VCE = 300 V, IC = 3A,
VGE = 15V
--
15
22
nC
Qge
Gate-Emitter Charge
--
5
8
nC
Qgc
Gate-Collector Charge
--
4
6
nC
Le
Internal Emitter Inductance
Measured 5mm from PKG
--
7.5
--
nH
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