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參數(shù)資料
| 型號： | SGS10N60RUFTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 16 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 597K |
| 代理商： | SGS10N60RUFTU |
2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
S
G
S10N60RUF
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
110
0
200
400
600
800
1000
1200
1400
Cres
Coes
Cies
Common Emitter
V
GE = 0V, f = 1MHz
T
C = 25
℃
C
a
pa
ci
ta
nce
[
p
F
]
Collector - Emitter Voltage, V
CE
[V]
10
100
10
100
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
I
C
= 10A
T
C
= 25℃ ━━
T
C = 125
℃ ------
Ton
Tr
S
w
itc
h
in
g
T
im
e
[n
s
]
Gate Resistance, R
G [ ]
10
100
1000
Eoff
Eon
Eoff
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 10A
T
C =
25℃ ━━
T
C = 125
℃ ------
S
w
it
ch
in
g
Lo
ss
[uJ]
Gate Resistance, R
G [ ]
10
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 10A
T
C =
25℃ ━━
T
C = 125
℃ ------
Sw
it
ch
in
g
T
im
e
[n
s]
Gate Resistance, R
G [ ]
6
8
10
12
14
16
18
20
10
100
Ton
Tr
Common Emitter
V
GE =
± 15V, R
G = 20
T
C =
25℃ ━━
T
C = 125
℃ ------
Sw
it
ch
in
g
T
im
e
[n
s]
Collector Current, I
C [A]
6
8
10
12
14
16
18
20
100
1000
Tf
Toff
Tf
Common Emitter
V
GE =
± 15V, R
G = 20
T
C =
25℃ ━━
T
C = 125
℃ ------
S
w
itc
h
in
g
T
im
e
[n
s
]
Collector Current, I
C [A]
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SGS13N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGS13N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGS13N60UFDTU | 功能描述:IGBT 晶體管 600V/6.5A/w/FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGS13N60UFTU | 功能描述:IGBT 晶體管 600V/6.5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGS150 | 制造商:Cooper Wiring Devices 功能描述: |
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