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參數(shù)資料
| 型號： | SGS10N60RUFTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 16 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 597K |
| 代理商： | SGS10N60RUFTU |
2001 Fairchild Semiconductor Corporation
April 2001
SGS10N60RUF Rev. A
IGBT
S
G
S10N60RUF
SGS10N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed
for
applications
such
as
motor
control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
Short circuit rated 10us @ TC = 100°C, VGE = 15V
High speed switching
Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A
High input impedance
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
SGS10N60RUF
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
@ TC = 25°C16
A
Collector Current
@ TC = 100°C10
A
ICM (1)
Pulsed Collector Current
30
A
TSC
Short Circuit Withstand Time
@ TC = 100°C10
s
PD
Maximum Power Dissipation
@ TC = 25°C55
W
Maximum Power Dissipation
@ TC = 100°C22
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
°C
Symbol
Parameter
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
--
2.3
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
G
C
E
G
C
E
TO-220F
G C E
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| SGW5N60RUFDTM | |
| SH2 | 20 A, 100 V, SILICON, SIGNAL DIODE |
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| SGS13N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
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| SGS13N60UFDTU | 功能描述:IGBT 晶體管 600V/6.5A/w/FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGS13N60UFTU | 功能描述:IGBT 晶體管 600V/6.5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGS150 | 制造商:Cooper Wiring Devices 功能描述: |
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