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參數(shù)資料
| 型號： | SGS10N60RUFTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 16 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 597K |
| 代理商： | SGS10N60RUFTU |
2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
S
G
S10N60RUF
Electrical Characteristics of IGBT T
C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
600
--
V
B
VCES/
T
J
Temperature Coeff. of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/
°C
ICES
Collector Cut-off Current
VCE = VCES, VGE = 0V
--
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
± 100
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 10mA, VCE = VGE
5.0
6.0
8.5
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 10A,
VGE = 15V
--
2.2
2.8
V
IC = 16A,
VGE = 15V
--
2.5
--
V
Dynamic Characteristics
Cies
Input Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
--
660
--
pF
Coes
Output Capacitance
--
115
--
pF
Cres
Reverse Transfer Capacitance
--
25
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 10A,
RG = 20, VGE = 15V,
Inductive Load, TC = 25°C
--
15
--
ns
tr
Rise Time
--
30
--
ns
td(off)
Turn-Off Delay Time
--
36
50
nS
tf
Fall Time
--
158
200
ns
Eon
Turn-On Switching Loss
--
141
--
J
Eoff
Turn-Off Switching Loss
--
215
--
J
Ets
Total Switching Loss
--
356
500
J
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 10A,
RG = 20, VGE = 15V,
Inductive Load, TC = 125°C
--
16
--
ns
tr
Rise Time
--
33
--
ns
td(off)
Turn-Off Delay Time
--
42
60
ns
tf
Fall Time
--
242
350
ns
Eon
Turn-On Switching Loss
--
161
--
J
Eoff
Turn-Off Switching Loss
--
452
--
J
Ets
Total Switching Loss
--
613
860
J
Tsc
Short Circuit Withstand Time
VCC = 300 V, VGE = 15V
@
TC = 100°C
10
--
s
Qg
Total Gate Charge
VCE = 300 V, IC = 10A,
VGE = 15V
--
30
45
nC
Qge
Gate-Emitter Charge
--
5
10
nC
Qgc
Gate-Collector Charge
--
8
16
nC
Le
Internal Emitter Inductance
Measured 5mm from PKG
--
7.5
--
nH
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相關代理商/技術參數(shù) |
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|---|---|
| SGS13N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGS13N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGS13N60UFDTU | 功能描述:IGBT 晶體管 600V/6.5A/w/FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGS13N60UFTU | 功能描述:IGBT 晶體管 600V/6.5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGS150 | 制造商:Cooper Wiring Devices 功能描述: |
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