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參數(shù)資料
| 型號(hào)： | SCANPSC110 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | SCAN Bridge Hierarchical and Multidrop Addressable JTAG Port (IEEE1149.1 System Test Support) |
| 中文描述： | 掃描橋?qū)哟魏投帱c(diǎn)尋址JTAG端口（IEEE1149.1系統(tǒng)測(cè)試支援） |
| 文件頁數(shù)： | 19/29頁 |
| 文件大小： | 459K |
| 代理商： | SCANPSC110 |
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DC Electrical Characteristics
(Continued)
Symbol
Parameter
V
CC
(V)
Military
T
A
=
Units
Conditions
55C to +125C
Guaranteed
Limits
±
1.0
I
IN
(OE,
TCK
B
, S
(0–5)
)
I
IN, MAX
(TRST, TDI
Ln
,
TDI
B
, TMS
B
)
I
IN, MAX
(TRST, TDI
Ln
,
TDI
B
, TMS
B
)
I
IN, MIN
(TDI
B
, TMS
B
,
TRST, TDI
Ln
)
I
CCT
Maximum Input
Leakage Current
Maximum Input
Leakage Current
5.5
μA
V
IN
= V
CC
or
V
IN
= GND
V
IN
= V
CC
5.5
3.7
μA
Maximum Input
Leakage Current
V
IN
= GND
5.5
385
μA
Minimum Input
Leakage Current
V
IN
= GND
5.5
160
μA
Maximum
I
CC
/Input
Maximum
I
CC
/Input
5.5
1.6
mA
V
IN
= V
CC
2.1V
I
CCT
(TDI
B
, TMS
B
,
TRST, TDI
L
)
I
CC
V
IN
= V
CC
2.1V
Test one at a time
with others floating
TDI
B
, TMS
B
, TRST,
5.5
1.75
mA
Maximum
Quiescent
Supply Current
Maximum
Quiescent
Supply Current
Minimum
Dynamic
Output Current
Minimum
Dynamic
Output Current
Minimum
Dynamic
Output Current
Minimum Dynamic
Output Current
Maximum
TRI-STATE
Leakage Current
Output Short
Circuit Current
5.5
168
μA
TDI
L
= V
CC
TDI
B
, TMS
B
, TRST,
I
CC, MAX
5.5
2.5
mA
TDI
L
= GND
V
OLD
= 1.65V max
V
IN
(OE) = V
IL
(Note 6)
V
OLD
= 0.8V
V
IN
(TRST) = V
IH
(Note 6)
V
OHD
= 3.85V max
(Note 6)
I
OLD
(TCK
Ln
, TMS
Ln
,
TDO
Ln
)
I
OLD
(TDO
B
)
5.5
50
mA
5.5
63
mA
I
OHD
(TCK
Ln
, TMS
Ln
,
TDO
Ln
)
I
OHD
(TDO
B
)
I
OZ
5.5
50
mA
V
OHD
= 2.0V max
(Note 6)
V
IN
(OE) = V
IH
V
IN
(TRST) = V
IL
V
O
= V
CC
, GND
V
O
= 0.0V
(Note 7)
5.5
27
mA
5.5
±
10.0
μA
I
OS
(TDO
B
)
5.5
100
mA
min
Note 6:
Maximum test duration of 2 ms. One output loaded at a time.
Note 7:
Maximum test duration not to exceed 1 second.
S
www.national.com
19
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