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Chapter 10 128 KByte Flash Module (S12XFTM128K2XFV1)
MC9S12XF - Family Reference Manual, Rev.1.19
Freescale Semiconductor
393
10.4.2.16 Program D-Flash Command
The Program D-Flash operation programs one to four previously erased words in the D-Flash user
partition. The Program D-Flash operation will confirm that the targeted location(s) were successfully
programmed upon completion.
CAUTION
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
Upon clearing CCIF to launch the Program D-Flash command, the user-supplied words will be transferred
to the Memory Controller and be programmed. The CCOBIX index value at Program D-Flash command
launch determines how many words will be programmed in the D-Flash block. No protection checks are
made in the Program D-Flash operation on the D-Flash block, only access error checks. The CCIF ag is
set when the operation has completed.
Table 10-64. Erase Verify D-Flash Section Command Error Handling
Register
Error Bit
Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 010 at command launch
Set if command not available in current mode (see
Table 10-30)
Set if an invalid global address [22:0] is supplied
Set if a misaligned word address is supplied (global address [0] != 0)
Set if the global address [22:0] points to an area of the D-Flash EEE partition
Set if the requested section breaches the end of the D-Flash block or goes into
the D-Flash EEE partition
FPVIOL
None
MGSTAT1
Set if any errors have been encountered during the read
MGSTAT0
Set if any non-correctable errors have been encountered during the read
FERSTAT
EPVIOLIF
None
Table 10-65. Program D-Flash Command FCCOB Requirements
CCOBIX[2:0]
FCCOB Parameters
000
0x11
Global address [22:16] to
identify the D-Flash block
001
Global address [15:0] of word to be programmed
010
Word 0 program value
011
Word 1 program value, if desired
100
Word 2 program value, if desired
101
Word 3 program value, if desired