參數(shù)資料
型號(hào)： S29GL512N
廠商： Spansion Inc.
英文描述： Replaced by PTB78560C :
中文描述： MirrorBit閃存系列
文件頁(yè)數(shù)： 100/110頁(yè)
文件大?。?/td> 2624K
代理商： S29GL512N
100
S29GLxxxN MirrorBitTM Flash Family
27631A4 May 13, 2004
A d v a n c e I n f o r m a t i o n
AC Characteristics
Alternate CE# Controlled Erase and Program Operations–S29GL512N Only
Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns and 100 ns speed options are tested with V
IO
= V
CC
= 3 V.
AC specifications for 100 ns and 110 ns speed options are tested with V
IO
= 1.8 V and V
CC
= 3.0 V.
Parameter
Speed Options
J EDEC
Std.
Description
90
100
100
110
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
100
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2,
3)
Typ
240
μs
Effective Write Buffer
Program Operation (Notes
2, 4)
Per Word
Typ
15
μs
Effective Accelerated Write
Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
13.5
μs
Program Operation (Note 2)
Word
Typ
60
μs
Accelerated Programming
Operation (Note 2)
Word
Typ
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1.0
sec
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL512N10FFI010 制造商:Spansion 功能描述:512M FLASH MEMORY 3V SPI 29GL512
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S29GL512N10TAI01 制造商:Spansion 功能描述:
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