參數(shù)資料
型號： S29GL128N11FFIVH2
廠商： SPANSION LLC
元件分類： PROM
英文描述： 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝： 10 X 13 MM, 1 MM PITCH, LEAD FREE, FBGA-64
文件頁數(shù)： 61/74頁
文件大?。?/td> 1593K
代理商： S29GL128N11FFIVH2
62
S29GL-N
S29GL-N_01_A0 May 1, 2006
Da ta
Sh e e t
18.3
Erase and Program Operations
Notes
1. Not 100% tested.
2. See the Erase And Programming Performance on page 68 for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with VIO = VCC = 3 V or
with VIO = 1.8 V and VCC = 3.0 V.
Parameter
Description
Speed Option
Unit
JEDEC
Std.
110
tAVAV
tWC
Write Cycle Time (Note 1)
Min
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
s
Effective Write Buffer Program Operation (Notes 2, 4)Per Word
Typ
15
s
Accelerated Effective Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
13.5
s
Program Operation (Note 2)
Word
Typ
60
s
Accelerated Programming Operation (Note 2)
Word
Typ
54
s
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
s
tBUSY
Erase/Program Valid to RY/BY# Delay
Max
90
ns
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