參數(shù)資料
型號: S29GL128N11FFIVH2
廠商: SPANSION LLC
元件分類: PROM
英文描述: 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝: 10 X 13 MM, 1 MM PITCH, LEAD FREE, FBGA-64
文件頁數(shù): 49/74頁
文件大?。?/td> 1593K
代理商: S29GL128N11FFIVH2
May 1, 2006 S29GL-N_01_A0
S29GL-N
51
Data
She e t
Figure 12.1 Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
12.2
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in
the erase-suspend-read mode. Table 12.1 on page 55 shows the outputs for RY/BY#.
DQ7 = Data?
Yes
No
DQ5 = 1
No
Yes
FAIL
PASS
Read DQ15–DQ0
Addr = VA
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
START
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