
May 1, 2006 S29GL-N_01_A0
S29GL-N
57
Data
She e t
15. DC Characteristics
15.1
CMOS Compatible
Notes
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the lower power mode when addresses remain stable tor tACC + 30 ns.
5. VIO = 1.65–1.95 V or 2.7–3.6 V
6. VCC = 3 V and VIO = 3V or 1.8V. When VIO is at 1.8V, I/O pins cannot operate at 3V.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
VIN = VSS to VCC,
VCC = VCC max
WP/ACC: ±2.0
A
Others: ±1.0
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
35
A
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
±1.0
A
ICC1
CE# = VIL; OE# = VIH, VCC = VCCmax;
f = 1 MHz, Byte Mode
620
mA
CE# = VIL; OE# = VIH, VCC = VCCmax;
f = 5 MHz, Word Mode
30
50
CE# = VIL; OE# = VIH, VCC = VCCmax;
f = 10 MHz
60
90
ICC2
CE# = VIL; OE# = VIH, VCC = VCCmax;
f = 10 MHz
110
mA
CE# = VIL, OE# = VIH, VCC = VCCmax;
f=33 MHz
520
ICC3
VCC Active Erase/Program Current
CE# = VIL, OE# = VIH, VCC = VCCmax
50
90
mA
ICC4
VCC Standby Current
VCC = VCCmax; VIO = VCC; OE# = VIH;
VIL = VSS + 0.3 V / –0.1 V;
CE#, RESET# = VCC ± 0.3 V
15
A
ICC5
VCC Reset Current
VCC = VCCmax; VIO = VCC;
VIL = VSS + 0.3 V / –0.1 V;
RESET# = VSS ± 0.3 V
15
A
ICC6
VCC = VCCmax; VIO = VCC;
VIH = VCC ± 0.3 V;
VIL = VSS + 0.3 V / –0.1 V;
WP#/ACC = VIH
15
A
IACC
ACC Accelerated Program Current
CE# = VIL, OE# = VIH, VCC = VCCmax,
WP#/ACC = VIH
WP#/
ACC pin
10
20
mA
VCC pin
50
90
VIL
–0.1
0.3 x VIO
V
VIH
0.7 x VIO
VIO + 0.3
V
VHH
Voltage for ACC Erase/Program
Acceleration
VCC = 2.7–3.6 V
11.5
12.5
V
VID
Voltage for Autoselect and Temporary
Sector Unprotect
VCC = 2.7–3.6 V
11.5
12.5
V
VOL
IOL = 100 A
0.15 x VIO
V
VOH
IOH = -100 A
0.85 x
VIO
V
VLKO
2.3
2.5
V