參數(shù)資料
型號(hào)： S29GL128N11FAIVH0
廠商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝： 10 X 13 MM, 1 MM PITCH, FBGA-64
文件頁(yè)數(shù)： 43/74頁(yè)
文件大?。?/td> 1593K
代理商： S29GL128N11FAIVH0
46
S29GL-N
S29GL-N_01_A0 May 1, 2006
Da ta
Sh e e t
11. Command Definitions
Legend
X = Don’t care.
RA = Read Address.
RD = Read Data.
PA = Program Address. Addresses latch on the falling edge of WE# or CE# pulse, whichever occurs later.
PD = Program Data. Data latches on the rising edge of WE# or CE# pulse, whichever occurs first.
SA = Sector Address. Any address that falls within a specified sector. See Table 8.2 on page 14 and Table 8.3 on page 20 for sector address ranges.
WBL = Write Buffer Location. Address must be within the same write buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes
1. See Table 8.1 on page 11 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles.
4. Address and data bits not specified in table, legend, or notes are don’t cares (each hex digit implies 4 bits of data).
5. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. The system must write the reset
command to return reading array data.
6. No unlock or command cycles required when bank is reading array data.
7. Reset command is required to return to reading array data in certain cases. See Reset Command on page 34 section for details.
8. Data in cycles 5 and 6 are listed in Table 8.4 on page 23.
9. The data is 00h for an unprotected sector and 01h for a protected sector. PPB Status Read provides the same data but in inverted form.
10. If DQ7 = 1, region is factory serialized and protected. If DQ7 = 0, region is unserialized and unprotected when shipped from factory. See Secured Silicon Sector
Flash Memory Region on page 29 for more information.
11. Command is valid when device is ready to read array data or when device is in autoselect mode.
12. Total number of cycles in the command sequence is determined by the number of words written to the write buffer.
13. Command sequence resets device for next command after write-to-buffer operation.
14. Requires Entry command sequence prior to execution. Unlock Bypass Reset command is required to return to reading array data.
15. System may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid
only during a sector erase operation.
16. Erase Resume command is valid only during the Erase Suspend mode.
17. Requires Entry command sequence prior to execution. Secured Silicon Sector Exit Reset command is required to exit this mode; device may otherwise be
placed in an unknown state.
Table 11.1 Memory Array Commands (x16)
Command Sequence
(Notes)
Cyc
les
Bus Cycles (Notes 1–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Asynchronous Read (6)
1
RA
RD
Reset (7)
1
XXX
F0
Au
to
-
sele
ct
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID (8)
6
555
AA
2AA
55
555
90
X01
227E
X0E
Data
X0F
Data
Sector Protect Verify (9)
4
555
AA
2AA
55
555
90
[SA]X02
Data
Secure Device Verify (10)
4
555
AA
2AA
55
555
90
X03
Data
CFI Query (11)
155
98
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (12)
6
555
AA
2AA
55
PA
25
SA
WC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (13)
3
555
AA
2AA
55
555
F0
Unloc
k
Bypass
Mode
Entry
3
555
AA
2AA
55
555
20
Program (14)
2
XXX
A0
PA
PD
Sector Erase (14)
2
XXX
80
SA
30
Chip Erase (14)
2
XXX
80
SA
10
Reset
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase/Program Suspend (15)
1
XXX
B0
Erase/Program Resume (16)
1
XXX
30
Secure
d
Silicon
Secto
r
Entry
3
555
AA
2AA
55
555
88
Program (17)
4
555
AA
2AA
55
555
A0
PA
PD
Read (17)
1
00
Data
Exit (17)
4
555
AA
2AA
55
555
90
XXX
00
相關(guān)PDF資料
PDF描述
S29GL128N11FFIVH2 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
S29JL032J70TFI213 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
S29PL032J65BFI150 2M X 16 FLASH 3V PROM, 65 ns, PBGA56
S29PL127J70BFI000 8M X 16 FLASH 3V PROM, 70 ns, PBGA80
S29XS064R0PBHW010 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128N11FFA010 制造商:Spansion 功能描述:
S29GL128N11FFA013 制造商:Spansion 功能描述:
S29GL128N11FFI010 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N11FFI020 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N11FFIIH0 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*