參數(shù)資料
型號： S29GL064A10BAIW12
廠商： SPANSION LLC
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： FBGA-64
文件頁數(shù)： 61/97頁
文件大小： 3490K
代理商： S29GL064A10BAIW12
62
S29GL-A MirrorBit Flash Family
S29GL-A_00_A5 January 11, 2006
Prel imi n ary
Table 31. Command Definitions (x8 Mode, BYTE# = VIL)
Command Sequence
Cyc
le
s
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr Data Addr Data Addr Data
Addr
Data
Addr
Data
Addr
Data
1
RA
RD
Reset (Note 7)
1
XXX
F0
Au
to
se
le
ct
) Manufacturer ID
4
AAA
AA
555
55
AAA
90
X00
01
Device ID (Note 9)
6
AAA
AA
555
55
AAA
90
X02
7E
X1E
4
AAA
AA
555
55
AAA
90
X02
Secured Silicon Sector Factory
Protect
4
AAA
AA
555
55
AAA
90
X06
Sector Group Protect Verify
4
AAA
AA
555
55
AAA
90
(SA)X04
00/01
Enter Secured Silicon Sector Region
3
AAA
AA
555
55
AAA
88
Exit Secured Silicon Sector Region
4
AAA
AA
555
55
AAA
90
XXX
00
Write to Buffer (Note 13)
3
AAA
AA
555
55
SA
25
SA
BC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 14)
3
AAA
AA
555
55
AAA
F0
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Program/Erase Suspend (Note 15)
1
XXX
B0
Program/Erase Resume (Note 16)
1
XXX
30
CFI Query (Note 17)
1
AA
98
Legend:
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or
CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of
WE# or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write
buffer page as PA.
BC = Byte Count. Number of write buffer locations to load minus 1.
Notes:
1. See Table 4 on page 19 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are 555 or AAA as shown in table, address bits above A11 are don’t care.
5. Unless otherwise noted, address bits A21–A11 are don’t cares.
6. No unlock or command cycles required when device is in read mode.
7. Reset command is required to return to read mode (or to erase-suspend-read mode if previously in Erase Suspend) when device is in
autoselect mode, or if DQ5 goes high while device is providing status information.
8. Fourth cycle of autoselect command sequence is a read cycle. Data bits DQ15–DQ8 are don’t care. See Autoselect Command Sequence on
page 51 or more information.
9. For S29GL064A and S29GL032A Device ID must be read in three cycles.
10. For S29GL016A, Device ID must be read in one cycle.
11. Refer to Table 15 on page 38, for data indicating Secured Silicon Sector factory protect status.
12. Data is 00h for an unprotected sector group and 01h for a protected sector group.
13. Total number of cycles in command sequence is determined by number of bytes written to write buffer. Maximum number of cycles in
command sequence is 37, including Program Buffer to Flash command.
14. Command sequence resets device for next command after aborted write-to-buffer operation.
15. System may read and program in non-erasing sectors, or enter autoselect mode, when in Erase Suspend mode. Erase Suspend command
is valid only during a sector erase operation.
16. Erase Resume command is valid only during Erase Suspend mode.
17. Command is valid when device is ready to read array data or when device is in autoselect mode.
18. Refer to Table 15 on page 38, for individual Device IDs per device density and model number.
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