參數(shù)資料
型號(hào)： S29GL064A10BAIW12
廠商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： 4M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： FBGA-64
文件頁(yè)數(shù)： 57/97頁(yè)
文件大?。?/td> 3490K
代理商： S29GL064A10BAIW12
58
S29GL-A MirrorBit Flash Family
S29GL-A_00_A5 January 11, 2006
Prel imi n ary
occurs, the chip erase command sequence should be reinitiated once the device
returns to reading array data, to ensure data integrity.
Figure 6, on page 59 illustrates the algorithm for the erase operation. Refer to
Table 38 on page 76 for parameters, and Figure 18, on page 80 for timing
diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence
is initiated by writing two unlock cycles, followed by a set-up command. Two ad-
ditional unlock cycles are written, and are then followed by the address of the
sector to be erased, and the sector erase command. Table 30 on page 61 and
Table 31 on page 62 shows the address and data requirements for the sector
erase command sequence.
The device does not require the system to preprogram prior to erase. The Em-
bedded Erase algorithm automatically programs and verifies the entire memory
for an all zero data pattern prior to electrical erase. The system is not required
to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 s occurs.
During the time-out period, additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 50 s, otherwise erasure
may begin. Any sector erase address and command following the exceeded
time-out may or may not be accepted. It is recommended that processor inter-
rupts be disabled during this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector Erase command is written. Any
command other than Sector Erase or Erase Suspend during the time-out
period resets the device to the read mode. Note that the Secured Silicon
Sector, autoselect, and CFI functions are unavailable when an erase op-
eration is in progress. The system must rewrite the command sequence and
any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed
out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the
rising edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the device returns to reading
array data and addresses are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6, or DQ2 in the erasing sector.
Refer to the Write Operation Status section for information on these status bits.
Once the sector erase operation begins, only the Erase Suspend command is
valid. All other commands are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that occurs, the sector erase
command sequence should be reinitiated once the device returns to reading
array data, to ensure data integrity.
Figure 6, on page 59 illustrates the algorithm for the erase operation. Refer to
Table 38 on page 76 for parameters, and Figure 18, on page 80 for timing
diagrams.
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