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參數(shù)資料
| 型號： | S29GL064A10BAIW12 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | FBGA-64 |
| 文件頁數(shù)： | 60/97頁 |
| 文件大小： | 3490K |
| 代理商： | S29GL064A10BAIW12 |
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January 11, 2006 S29GL-A_00_A5
S29GL-A MirrorBit Flash Family
61
Pr el im i n a r y
Command Definitions
Table 30. Command Definitions (x16 Mode, BYTE# = VIH)
Command
Sequence
Cyc
le
s
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Read (Note 5)
1
RA
RD
Reset (Note 6)
1
XXX
F0
Au
to
se
lec
t
) Manufacturer ID
4
555
AA
2AA
55
555
90
X00
0001
Device ID (Note 8)
6
555
AA
2AA
55
555
90
X01
227E
Device ID (Note 9)
4
555
AA
2AA
55
555
90
X01
Secured Silicon Sector Factory Protect
4
555
AA
2AA
55
555
90
X03
Sector Group Protect Verify
4
555
AA
2AA
55
555
90 (SA)X02
00/01
Enter Secured Silicon Sector Region
3
555
AA
2AA
55
555
88
Exit Secured Silicon Sector Region
4
555
AA
2AA
55
555
90
XXX
00
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (Note 12)
3
555
AA
2AA
55
SA
25
SA
WC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 13)
3
555
AA
2AA
55
555
F0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 14)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 15)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (Note 16)
1
XXX
B0
Program/Erase Resume (Note 17)
1
XXX
30
CFI Query (Note 18)
1
55
98
Legend:
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or
CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of
WE# or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes:
1. See Table 4 on page 19 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are 555 or 2AA as shown in table, address bits above A11 and data bits
above DQ7 are don’t care.
5. No unlock or command cycles required when device is in read mode.
6. Reset command is required to return to read mode (or to erase-suspend-read mode if previously in Erase Suspend) when device is in
autoselect mode, or if DQ5 goes high while device is providing status information.
7. Fourth cycle of the autoselect command sequence is a read cycle. Data bits DQ15–DQ8 are don’t care. Except for RD, PD and WC.
SeeAutoselect Command Sequence on page 51 for more information.
8. For S29GL064A and S29GL032A, Device ID must be read in three cycles.
9. For S29GL016A, Device ID must be read in one cycle.
10. Refer to Table 15 on page 38 for data indicating Secured Silicon Sector factory protect status.
11. Data is 00h for an unprotected sector group and 01h for a protected sector group.
12. Total number of cycles in command sequence is determined by number of words written to write buffer. Maximum number of cycles in
command sequence is 21, including Program Buffer to Flash command.
13. Command sequence resets device for next command after aborted write-to-buffer operation.
14. Unlock Bypass command is required prior to Unlock Bypass Program command.
15. Unlock Bypass Reset command is required to return to read mode when device is in unlock bypass mode.
16. System may read and program in non-erasing sectors, or enter autoselect mode, when in Erase Suspend mode. Erase Suspend command
is valid only during a sector erase operation.
17. Erase Resume command is valid only during Erase Suspend mode.
18. Command is valid when device is ready to read array data or when device is in autoselect mode.
19. Refer to Table 15 on page 38, for individual Device IDs per device density and model number.
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