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參數(shù)資料
| 型號(hào)： | RF1S60P03SM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 88K |
| 代理商： | RF1S60P03SM |
4-140
File Number
3951.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG60P03, RFP60P03, RF1S60P03SM
60A, 30V 0.027 Ohm, P-Channel Power
MOSFETs
These P-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49045.
Features
60A, 30V
r
DS(ON)
= 0.027
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG60P03
TO-247
RFG60P03
RFP60P03
TO-220AB
RFP60P03
RF1S60P03SM
TO-263AB
F1S60P03
NOTE: Whenordering,usetheentirepartnumber.Addthesuffix9Ato
obtain the TO-263AB variant in tape and reel, i.e. RF1S60P03SM9A.
G
D
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs |
| RFG60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場效應(yīng)管) |
| RFP60P03 | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| RF1S630SM | 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs |
| RF1S640SM | 18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S60P03SM9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-263AB |
| RF1S630 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S630SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S630SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S640 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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