參數(shù)資料
型號: RD38F1010C0ZBL0
廠商: INTEL CORP
元件分類: 存儲器
英文描述: CAPACITOR, BESTCAP 33 MILLI FARAD 7V CAPACITOR, BESTCAP 33 MILLI FARAD 7V; CAPACITANCE:33MF; VOLTAGE RATING, DC:7V; CAPACITOR DIELECTRIC TYPE:ELECTRONIC; SERIES:BESTCAP; TEMP, OP. MAX:75(DEGREE C); TEMP, OP. MIN:-20(DEGREE C); RoHS Compliant: Yes
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù): 58/70頁
文件大?。?/td> 1223K
代理商: RD38F1010C0ZBL0
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
58
Datasheet
Table28. ProtectionRegisterInformation
Offset
(1)
P=35h
Length
Description
(OptionalFlashFeaturesandCommands)
NumberofProtectionregisterfieldsinJEDECIDspace.
“00h,”indicatesthat256protectionbytesareavailable
ProtectionField1:ProtectionDescription
Thisfielddescribesuser-availableOneTimeProgrammable(OTP)
Protectionregisterbytes.Somearepre-programmedwithdevice-
uniqueserialnumbers.Othersareuserprogrammable.Bits0–15point
totheProtectionregisterLockbyte,thesection’sfirstbyte.The
followingbytesarefactorypre-programmedanduser-programmable.
bits0–7=Lock/bytesJEDEC-planephysicallowaddress
bits8–15=Lock/bytesJEDEC-planephysicalhighaddress
bits16–23=“n”suchthat2
n
=factorypre-programmedbytes
bits24–31=“n”suchthat2
n
=userprogrammablebytes
Addr.
Hex
Code
Value
(P+E)h
1
43:
--01
01
(P+F)h
4
44:
--80
80h
(P+10)h
45:
--00
00h
(P+11)h
46:
--03
8byte
(P+12)h
(P+13)h
NOTE:
1.ThevariablePisapointerwhichisdefinedatCFIoffset15h.
47:
48:
--03
8byte
Reservedforfutureuse
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