參數(shù)資料
型號(hào)： RD38F1010C0ZBL0
廠商： INTEL CORP
元件分類(lèi)： 存儲(chǔ)器
英文描述： CAPACITOR, BESTCAP 33 MILLI FARAD 7V CAPACITOR, BESTCAP 33 MILLI FARAD 7V; CAPACITANCE:33MF; VOLTAGE RATING, DC:7V; CAPACITOR DIELECTRIC TYPE:ELECTRONIC; SERIES:BESTCAP; TEMP, OP. MAX:75(DEGREE C); TEMP, OP. MIN:-20(DEGREE C); RoHS Compliant: Yes
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA66
封裝： 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁(yè)數(shù)： 55/70頁(yè)
文件大?。?/td> 1223K
代理商： RD38F1010C0ZBL0
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
Datasheet
55
B.5
SystemInterfaceInformation
Table25. SystemInterfaceInformation
Offset
Length
Description
Addr.
Hex
Code
Value
1Bh
1
V
CC
logicsupplyminimumprogram/erasevoltage
bits0–3BCD100mV
bits4–7BCDvolts
V
logicsupplymaximumprogram/erasevoltage
bits0–3BCD100mV
bits4–7BCDvolts
V
[programming]supplyminimumprogram/erasevoltage
bits0–3BCD100mV
bits4–7HEXvolts
V
PP
[programming]supplymaximumprogram/erasevoltage
bits0–3BCD100mV
bits4–7HEXvolts
“n”suchthattypicalsinglewordprogramtime-out=2
n
μs
V
logicsupplyminimumprogram/erasevoltage
bits0–3BCD100mV
bits4–7BCDvolts
V
CC
logicsupplymaximumprogram/erasevoltage
bits0–3BCD100mV
bits4–7BCDvolts
V
[programming]supplyminimumprogram/erasevoltage
bits0–3BCD100mV
bits4–7HEXvolts
V
[programming]supplymaximumprogram/erasevoltage
bits0–3BCD100mV
bits4–7HEXvolts
“n”suchthattypicalsinglewordprogramtime-out=2
n
μs
V
logicsupplyminimumprogram/erasevoltage
bits0–3BCD100mV
bits4–7BCDvolts
V
logicsupplymaximumprogram/erasevoltage
bits0–3BCD100mV
bits4–7BCDvolts
V
PP
[programming]supplyminimumprogram/erasevoltage
bits0–3BCD100mV
bits4–7HEXvolts
“n”suchthattypicalmax.bufferwritetime-out=2
n
μs
“n”suchthattypicalblockerasetime-out=2
n
ms
“n”suchthattypicalfullchiperasetime-out=2
n
ms
“n”suchthatmaximumwordprogramtime-out=2
n
timestypical
“n”suchthatmaximumbufferwritetime-out=2
n
timestypical
“n”suchthatmaximumblockerasetime-out=2
n
timestypical
“n”suchthatmaximumchiperasetime-out=2
n
timestypical
1B:
--27
2.7V
1Ch
1
1C:
--36
3.3V
1Dh
1
1D:
--B4
11.4V
1Eh
1
1E:
--C6
12.6V
1Fh
1
1F:
--05
32μs
1Bh
1
1B:
--27
2.7V
1Ch
1
1C:
--36
3.3V
1Dh
1
1D:
--B4
11.4V
1Eh
1
1E:
--C6
12.6V
1Fh
1
1F:
--05
32μs
1Bh
1
1B:
--27
2.7V
1Ch
1
1C:
--36
3.3V
1Dh
1
1D:
--B4
11.4V
20h
21h
22h
23h
24h
25h
26h
1
1
1
1
1
1
1
20:
21:
22:
23:
24:
25:
26:
--00
--0A
--00
--04
--00
--03
--00
n/a
1s
n/a
512μs
n/a
8s
NA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RD38F1010C0ZTL0 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD38F1010W0YBQ0 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:Wireless Flash Memory (W18/W30 SCSP)
RD38F1010W0YDQ0 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:Wireless Flash Memory (W18/W30 SCSP)
RD38F1010W0YTQ0 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:Wireless Flash Memory (W18/W30 SCSP)
RD38F1010W0ZBQ0 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:Wireless Flash Memory (W18/W30 SCSP)
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