參數(shù)資料
型號(hào): RD38F1010C0ZBL0
廠商: INTEL CORP
元件分類: 存儲(chǔ)器
英文描述: CAPACITOR, BESTCAP 33 MILLI FARAD 7V CAPACITOR, BESTCAP 33 MILLI FARAD 7V; CAPACITANCE:33MF; VOLTAGE RATING, DC:7V; CAPACITOR DIELECTRIC TYPE:ELECTRONIC; SERIES:BESTCAP; TEMP, OP. MAX:75(DEGREE C); TEMP, OP. MIN:-20(DEGREE C); RoHS Compliant: Yes
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù): 32/70頁
文件大?。?/td> 1223K
代理商: RD38F1010C0ZBL0
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
32
Datasheet
t
WHQV3
/t
EHQV3
t
WHRH1
/t
EHRH1
32-KWMainBlockEraseTime(Word)
2,3
1
5
0.6
5
s
ProgramSuspendLatency
3
5
10
5
10
μs
t
WHRH2
/t
EHRH2
EraseSuspendLatency
3
5
20
5
20
μs
NOTES:
1. TypicalvaluesmeasuredatT
= +25°Candnominalvoltages.
2. Excludesexternalsystem-leveloverhead.
3. Sampled,butnot100%tested.
Table15. FlashEraseandProgramTimings(Sheet2of2)
Symbol
Parameter
F-V
PP
1.65V–3.3V
11.4V–12.6V
Unit
Note
Typ
(1)
Max
Typ
(1)
Max
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RD38F1010C0ZTL0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
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