參數(shù)資料
型號: RD38F1010C0ZBL0
廠商: INTEL CORP
元件分類: 存儲器
英文描述: CAPACITOR, BESTCAP 33 MILLI FARAD 7V CAPACITOR, BESTCAP 33 MILLI FARAD 7V; CAPACITANCE:33MF; VOLTAGE RATING, DC:7V; CAPACITOR DIELECTRIC TYPE:ELECTRONIC; SERIES:BESTCAP; TEMP, OP. MAX:75(DEGREE C); TEMP, OP. MIN:-20(DEGREE C); RoHS Compliant: Yes
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù): 48/70頁
文件大?。?/td> 1223K
代理商: RD38F1010C0ZBL0
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
48
Datasheet
0645_14
Figure17.AutomatedBlockEraseFlowchart
Start
Write20H
WriteD0Hand
BlockAddress
ReadStatusRegister
SR.7=
FullStatus
CheckifDesired
BlockEraseComplete
FULLSTATUSCHECKPROCEDURE
BusOperation
Write
Write
Standby
Repeatforsubsequentblockerasures.
FullStatusCheckcanbedoneaftereachblockeraseorafterasequenceof
blockerasures.
WriteFFHafterthelastwriteoperationtoresetdevicetoreadarraymode.
BusOperation
Standby
SR.1and3MUSTbecleared,ifsetduringaneraseattempt,beforefurther
attemptsareallowedbytheWriteStateMachine.
SR.1,3,4,5areonlyclearedbytheClearStausRegisterCommand,incases
wheremultiplebytesareerasedbeforefullstatusischecked.
Ifanerrorisdetected,clearthestatusregisterbeforeattemptingretryorother
errorrecovery.
No
Yes
SuspendErase
Suspend
EraseLoop
1
0
Standby
Command
EraseSetup
EraseConfirm
Comments
Data=20H
Addr=WithinBlocktoBe
Erased
Data=D0H
Addr=WithinBlocktoBe
Erased
CheckSR.7
1=WSMReady
0=WSMBusy
Command
Comments
CheckSR.3
1=V
PP
LowDetect
CheckSR.4,5
Both1=CommandSequence
Error
ReadStatusRegister
Data(SeeAbove)
V
PP
RangeError
CommandSequence
Error
BlockErase
Successful
SR.3=
SR.4,5=
1
0
1
0
BlockEraseError
SR.5=
1
0
AttemptedEraseof
LockedBlock-Aborted
SR.1=
1
0
Read
StatusRegisterDataToggle
CE#orOE#toUpdateStatus
RegisterData
Standby
CheckSR.5
1=BlockEraseError
Standby
CheckSR.1
1=AttemptedEraseof
LockedBlock-EraseAborted
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