- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374575 > RD28F3204W30T85 (INTEL CORP) 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) PDF資料下載
參數(shù)資料
| 型號(hào)： | RD28F3204W30T85 |
| 廠商： | INTEL CORP |
| 元件分類(lèi)： | 存儲(chǔ)器 |
| 英文描述： | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA80 |
| 封裝： | 14 X 8 MM, 0.80 MM PITCH, STACK, CSP-80 |
| 文件頁(yè)數(shù)： | 73/82頁(yè) |
| 文件大?。?/td> | 749K |
| 代理商： | RD28F3204W30T85 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)當(dāng)前第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
67
Figure 36. Protection Register Programming Flowchart
FULL STATUS CHECK PROCEDURE
Protection Program operations addresses must be within the
protection register address space. Addresses outside this
space will return an error.
Repeat for subsequent programming operations.
Full Status register check can be done after each program or
after a sequence of program operations.
Write FFh after the last operation to enter read array mode.
SR.3 MUST be cleared before the Write State Machine will
allow further program attempts.
Only the Clear Staus Register command clears SR.1, 3, 4.
If an error is detected, clear the Status register before
attempting a program retry or other error recovery.
Yes
No
1,1
0,1
1,1
PROTECTION REGISTER PROGRAMMING PROCEDURE
Start
Write C0h
Addr=Prot addr
Write Protect.
Register
Address / Data
Read Status
Register
SR.7 = 1
Full Status
Check
(if desired)
Program
Complete
Read Status
Register Data
Program
Successful
SR.3, SR.4 =
SR.1, SR.4 =
SR.1, SR.4 =
V
PP
Range Error
Programming Error
Locked-Register
Program Aborted
Standby
Standby
OpBus
SR.1 SR.3 SR.4
0
1
1
V
PP
Error
0
0
1
Prot. Reg.
Prog. Error
Comments
Write
Write
Standby
Protection
Program
Setup
Protection
Program
Data = C0H
Addr = First Location to Program
Data = Data to Program
Addr = Location to Program
Check SR.7
1 = WSM Ready
0 = WSM Busy
OpBus
Comments
Read
Status Register Data Toggle CE# or
OE# to Update Status Register Data
Standby
1
0
1
Register Locked:
Aborted
PROTFLOW.WMF
Program Setup
Confirm Data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RD28F6408W30B70 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| RD28F6408W30B85 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| RD28F6408W30T70 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| RD28F6408W30T85 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| RD30HUF1 | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RD28F3208C3B70 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F3208C3B90 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F3208C3T70 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F3208C3T90 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F6408W30B70 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。