參數(shù)資料
型號(hào): RD28F3204W30T85
廠商: INTEL CORP
元件分類: 存儲(chǔ)器
英文描述: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA80
封裝: 14 X 8 MM, 0.80 MM PITCH, STACK, CSP-80
文件頁(yè)數(shù): 47/82頁(yè)
文件大?。?/td> 749K
代理商: RD28F3204W30T85
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
41
NOTES:
1. See
Figure 12,
AC Input/Output Reference Waveform
on page 38
for timing measurements and maximum
allowable input slew rate.
2. AC specifications assume the data bus voltage is less than or equal to V
CCQ
when a read operation is
initiated.
3. t
= 85 ns for 128-Mbit device.
4. Address hold in synchronous burst-mode is defined as t
CHAX
or t
VHAX
, whichever timing specification is
satisfied first.
5. OE# may be delayed by up to t
ELQV
t
GLQV
after the falling edge of CE# without impact to t
ELQV
.
6. Sampled, not 100% tested.
7. Applies only to subsequent synchronous reads.
Figure 14. Single Word Asynchronous Read Waveform
V
IH
V
IL
Valid
Address
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
High Z
V
OH
V
OL
Valid
Output
V
IH
V
IL
R1
R2
R3
R4
R5
R7
R10
Generic_Async_Rd
Address [A]
CE# [E]
OE# [G]
WE# [W]
Data [D/Q]
RST# [P]
R8
R9
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