參數(shù)資料
型號: RD28F3204W30T85
廠商: INTEL CORP
元件分類: 存儲器
英文描述: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA80
封裝: 14 X 8 MM, 0.80 MM PITCH, STACK, CSP-80
文件頁數(shù): 56/82頁
文件大?。?/td> 749K
代理商: RD28F3204W30T85
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
50
Preliminary
NOTE:
1. V
power-up and standby.
2. Write Program or Erase Setup command.
3. Write valid address and data (for program) or Erase Confirm command.
4. Automated program/erase delay.
5. Read status register data (SRD) to determine program/erase operation completion.
6. OE# and CE# must be driven active (low) and WE# must be de-asserted (high) for read operations.
Figure 23. Write Waveform
Note 1
Note 2
Note 3
Note 4
Note 5
Address [A]
V
IH
V
IL
Valid
Address
Valid
Address
CE# (WE#) [E(W)]
V
IH
V
IL
Note 6
OE# [G]
V
IH
V
IL
WE# (CE#) [W(E)]
V
IH
V
IL
RST# [P]
V
IH
V
IL
W6
W7
W8
W11
W12
V
PP
[V]
V
PP1/2
V
PPLK
V
IL
WP# [B]
V
IH
V
IL
Data [D/Q]
V
IH
V
IL
Data In
Valid
Data
ADV# [V]
V
IH
V
IL
W16
W1
W2
W3
W5
W9
W10
W13
W14
Data In
Valid
Address
Note 6
W4
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