參數(shù)資料
型號： PSMN008-75P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 8/14頁
文件大?。?/td> 132K
代理商： PSMN008-75P
Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 18 September 2000
8 of 14
9397 750 07495
Philips Electronics N.V. 2000. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 75 A; V
DS
= 15 V and 60 V
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
03ac70
0
5
10
15
20
25
30
35
40
45
50
0
0.1 0.2
0.3 0.4 0.5 0.6 0.7
0.8 0.9
VSD (V)
1
IS
(A)
175 oC
Tj = 25 oC
VGS = 0 V
03ac69
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
10
20
30
40
50
60
70
90 100
80
VGS
(V)
ID = 75 A
Tj = 25 oC
VDS = 15 V
VDS = 60 V
相關(guān)PDF資料
PDF描述
PSMN009-100W Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket
PSS8050 NPN medium power 25 V transistor
PSS8550 PNP medium power 25 V transistor
PSS8550C PNP medium power 25 V transistor
PSS8550D PNP medium power 25 V transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN008-75P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
PSMN009-100B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100P 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*