參數(shù)資料
型號(hào)： PSMN008-75P
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 2/14頁(yè)
文件大?。?/td> 132K
代理商： PSMN008-75P
Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 18 September 2000
2 of 14
9397 750 07495
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Conditions
T
j
= 25 to 175
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
Typ
7.9
Max
75
75
230
175
8.5
Unit
V
A
W
°
C
m
V
GS
= 10 V; I
D
= 25 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
T
j
= 25 to 175
°
C
T
j
= 25 to 175
°
C; R
GS
= 20 k
Min
Max
75
75
±
20
75
Unit
V
V
V
A
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 2
and
3
T
mb
= 25
°
C;
Figure 1
75
A
I
DM
peak drain current
240
A
P
tot
T
stg
T
j
Source-drain diode
I
S
total power dissipation
storage temperature
operating junction temperature
55
55
230
+175
+75
W
°
C
°
C
source (diode forward) current
(DC)
peak source (diode forward)
current
Avalanche ruggedness
E
AS
non-repetitive avalanche energy
T
mb
= 25
°
C
75
A
I
SM
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
240
A
unclamped inductive load; I
D
= 75 A;
t
p
= 0.1 ms; V
DD
≤
15 V;
R
GS
= 50
; V
GS
= 10 V; starting
T
j
= 25
°
C;
Figure 4
unclamped inductive load;
V
DD
≤
15 V; R
GS
= 50
;
V
GS
= 10 V;
Figure 4
360
mJ
I
AS
non-repetitive avalanche current
75
A
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參數(shù)描述
PSMN008-75P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100B 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
PSMN009-100B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100P 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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