參數(shù)資料
型號： PSMN008-75P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 3/14頁
文件大?。?/td> 132K
代理商： PSMN008-75P
Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 18 September 2000
3 of 14
9397 750 07495
Philips Electronics N.V. 2000. All rights reserved.
V
GS
≥
10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse
Unclamped inductive load; V
DD
≤
15 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C and 150
°
C.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
03aa11
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
Pder
(%)
Tamb (oC)
Ider
(%)
120
100
80
60
40
20
0
Tmb (oC)
03ad10
25
75
125
175
0
50
100
150
200
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03ac65
10-1
1
10
102
103
1
10
102
103
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
1 ms
tp = 100
μ
s
RDSon = VDS/ ID
tp
tp
T
T
P
t
δ
=
03ac93
1
10
102
103
10-2
10-1
1
10
IAS
(A)
25 oC
tp(ms)
Tj prior to avalance = 150 oC
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相關代理商/技術參數(shù)
參數(shù)描述
PSMN008-75P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
PSMN009-100B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100P 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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