參數(shù)資料
型號： PSMN008-75P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 7/14頁
文件大?。?/td> 132K
代理商： PSMN008-75P
Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 18 September 2000
7 of 14
9397 750 07495
Philips Electronics N.V. 2000. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 12. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
Tj (oC)
180
VGS(th)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
0
1
2
3
4
5
max
typ
min
VGS (V)
ID
(A)
03ac71
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
60
70
80
ID (A)
90 100
(S)
gfs
VDS > ID X RDSon
Tj = 25 oC
175 oC
03ac68
102
103
104
10-1
1
10
102
VDS (V)
Ciss, Coss,
Crss (pF)
Ciss
Coss
Crss
相關PDF資料
PDF描述
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN008-75P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
PSMN009-100B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN009-100P 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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