型號: | PSMN008-75P |
廠商: | NXP SEMICONDUCTORS |
元件分類: | JFETs |
英文描述: | N-channel enhancement mode field-effect transistor |
中文描述: | 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
封裝: | PLASTIC, SC-46, 3 PIN |
文件頁數(shù): | 4/14頁 |
文件大小: | 132K |
代理商: | PSMN008-75P |
相關(guān)PDF資料 |
PDF描述 |
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PSMN009-100W | Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket |
PSS8050 | NPN medium power 25 V transistor |
PSS8550 | PNP medium power 25 V transistor |
PSS8550C | PNP medium power 25 V transistor |
PSS8550D | PNP medium power 25 V transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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PSMN008-75P,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
PSMN009-100B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
PSMN009-100B /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
PSMN009-100B,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
PSMN009-100P | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |